Highly efficient 808-nm-range Al-free lasers by gas source MBE

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3004, Issue , 1997, Pages 34-42

  Ovtchinnikov, Alexander ^a   Naeppi, Jari ^a   Aarik, Jaan ^a   Mohrdiek, Stefan ^a   Asonen, Harry M ^a  

^a Tutcore Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EFFICIENCY; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; ORGANOMETALLICS; QUALITY CONTROL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DIODES;

GAS SOURCE MOLECULAR BEAM EPITAXY; QUATERNARY ALLOYS;

SEMICONDUCTOR LASERS;

EID: 0031359014     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)