Aluminum free GaInAsP/GaAs lasers of 808 nm wavelength range by gas source MBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 176-179

  Aarik, J ^a   Ovtchinnikov, A ^a   Asonen, H ^a  

^a Tutcore Ltd   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PUMPING (LASER); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH;

GAS SOURCE MOLECULAR BEAM EPITAXY; LASER BARS;

SEMICONDUCTOR LASERS;

EID: 0029712152     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)