High performance InGaAs/InGaAsP/AlGaAs diode lasers (λ = 0.98 μm) grown by MOCVD

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1999, Pages 76-77

  Yang, Guowen ^a   Hwu, R Jennifer ^a   Chern, J H ^a   Sadwick, Larry ^a   Xu, Z T ^a  

^a UNIVERSITY OF UTAH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ALUMINUM GALLIUM ARSENIDE; INDIUM GALLIUM ARSENIDE PHOSPHIDE;

QUANTUM WELL LASERS;

EID: 0033312529     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)