Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate

Applied Physics Letters

Volumn 69, Issue 24, 1996, Pages 3740-3742

  Cho, Yong Hoon ^a   Choe, Byung Doo ^a   Lim, H ^b  

^a Seoul National University   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005479160     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117207     Document Type: Article

References (13)

1. M. O. Watanabe, J. Yoshida, M. Mashita, T. Nakanisi, and A. Hojo, J. Appl. Phys. 57, 5340 (1985).
2. I.-J. Kim, Y.-H. Cho, K.-S. Kim, B.-D. Choe, and H. Lim, Appl. Phys. Lett. 68, 3488 (1996).
3. Y.-H. Cho, K.-S. Kim, S.-Y. Ryu, S.-K. Kim, B.-D. Choe, and H. Lim, Appl. Phys. Lett. 66, 1785 (1995).
4. F. Capasso and G. Margaritondo, Heterojunction Band Discontinuities: Physics and Device Applications (North-Holland, Amsterdam, 1987).
5. G. Bratina, L. Vanzetti, L. Sorba, G. Biasiol, A. Franciosi, M. Peressi, and S. Baroni, Phys. Rev. B 50, 11723 (1994).
6. M. S. Hybertsen, Appl. Phys. Lett. 58, 1759 (1991).
7. Y. Foulon and C. Priester, Phys. Rev. B 45, 6259 (1992).
8. J. Böhrer, A. Krost, T. Wolf, and D. Bimberg, Phys. Rev. B 47, 6439 (1993).
9. H. Kroemer, W. Y. Chien, J. S. Harris, Jr., and D. D. Edwall, Appl. Phys. Lett. 36, 295 (1980).
10. M. A. Rao, E. J. Caine, H. Kroemer, S. I. Long, and D. I. Babic, J. Appl. Phys. 61, 643 (1987).
11. M. O. Watanabe and Y. Ohba, Appl. Phys. Lett. 50, 906 (1987).
12. S. R. Forrest, P. H. Schmidt, R. B. Wilson, and M. L. Kaplan, Appl. Phys. Lett. 45, 1199 (1984).
13. H. Kroemer, Appl. Phys. Lett. 46, 504 (1985).