High-power InGaAs(P)/InGa(Al)P/GaAs semiconductor diode lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 7-12

  Mawst, Luke J ^a   Botez, Dan ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MICROMETERS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; THICKNESS MEASUREMENT; CONTINUOUS WAVE LASERS; EFFICIENCY; PHOSPHORUS; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

AL-FREE; CONTINUOUS-WAVE (CW) POWERS; HIGH POWERS; SEMICONDUCTOR DIODE LASERS; HIGH-POWER LASERS; STRIPE LASERS; WALLPLUG EFFICIENCY;

SEMICONDUCTOR LASERS;

EID: 0031383467     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273784     Document Type: Conference Paper

References (13)

1. J.K. Wade et al., Appl. Phys. Lett., 70, 149(1997).
2. M. Sagawa et al., IEEE J. Selected Topics Quantum Electron., 1, 189(1995).
3. J. Diaz et al., IEEE Photon. Tech. Lett., 6, 132(1994).
4. L. J. Mawst et al., Appl. Phys. Lett., 69, 1532(1996).
5. D. Botez et al., Electron. Lett., 32, 2012(1996).
6. A. Bhattacharya et al., Electron. Lett., 32, 657(1996).
7. L. J. Mawst, D. Botez, J. S. Morris, V. Yakoviev, unpublished.
8. D.Z. Garbuzov et al., IEEE J. Quantum Electron, QE-27, 1531(1991).
9. K. Uppal et al., IEEE Photon. Tech. Lett., 7, 1128 (1995).
10. T. Fukunaga et al., Jpn.J. App. Phys., 34, L1175 (1995).
11. W. Plano et al., IEEE Photon Tech. Lett., 6, 465 (1994).
12. D.Z. Garbuzov et al., SPIE Proc., 2682, 20 (1996).
13. K. Shigihara et al., IEEE J. Quantum Electron., QE-27, 1537 (1991).