Aluminum-free active area laser bars at 790nm - 830nm wavelengths

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3628, Issue , 1999, Pages 11-18

  Asonen, H ^a   Aarik, J ^a   Bournes, P A ^a   Corvini, P ^a   Fang, F ^a   Finander, M ^a   Hmelar, M ^a   Jansen, M ^a   Nabiev, R ^a   Nappi, J ^a   Rakennus, K ^a   Salokatve, A ^a  

^a Coherent Semiconductor Group ^*  (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; HIGH POWER LASERS; MOLECULAR BEAM EPITAXY; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; STRAIN; THERMODYNAMIC STABILITY;

ALUMINUM FREE ACTIVE LASER DIODES; LASER BARS; THERMAL PERFORMANCE;

SEMICONDUCTOR LASERS;

EID: 0032663376     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)