Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP : Fe regrowth

IEEE Transactions on Electron Devices

Volumn 44, Issue 2, 1997, Pages 339-340

  Lourdudoss, S ^a,b   Ovtchinnikov, A ^a   Kjebon, O ^a   Nilsson, S ^b   Backbom L ^a   Klinga, T ^a   Holz, R ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b Tutcore Ltd   (Finland)

Author keywords

Bh lasers; Reactive ion etching; Selective growth; Semi insulating gainp

Indexed keywords

ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; IRON; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

BURIED HETEROSTRUCTURE LASER; GAS SOURCE MOLECULAR BEAM EPITAXY; HYDRIDE VAPOR PHASE EPITAXY; SELECTIVE GROWTH;

SEMICONDUCTOR LASERS;

EID: 0031078965     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.557728     Document Type: Article

References (11)

1. O. Kjebon, R. Schatz, S. Lourdudoss, S. Nilsson, B. Stålnacke, U. Öhlander, K. Streubel, and J. Wallin, "Modulation response measurements and evaluation of MQW InGaAsP lasers of various designs," in SPIE Symp. Lasers and Integrated Optoelectron. - High-Speed Semiconductor Laser Sources, 1996, paper no. 2684-25.
2. P. Morton, R. A. Logan, T. Tanbun-Ek, P. F. Sciortinio, Jr., A. M. Sergent, R. K. Montgomery, and B. T. Lee, "25 GHz bandwidth 1.55-μm GaInAsP p-doped strained multiquantum-well lasers," Electron. Lett., vol. 28, no. 23, pp. 2156-2157, 1992.
3. C. S. Hong, D. Kasemet, M. E. Kim, and R. A. Milano, "GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process," Electron. Lett., vol. 19, no. 19, pp. 759-760, 1983.
4. C. J. Chang-Hasnain, Y.-A. Wu, G. S. Li, G. Hasnain, K. D. Choquette, C. Caneau, and L. T. Florez, "Low threshold buried heterostructure vertical.cavity surface-emitting laser," in Conf. Lasers and ElectroOptics, Tech. Dig. Ser., 1993, vol. 11, pp. 136-138.
5. H. Narui and D. Imanishi, "Low threshold current 780 nm AlGaAs buried heterostructure lasers on ridged GaAs substrate aligned to [011̄], fabricated using single-step MOCVD," Electron. Lett., vol. 32, no. 7, pp. 664-665, 1996.
6. M. Ohkubo, S. Namiki, T. Ijichi, A. Iketani, and T. Kikuta, "0.98-μm InGaAs-SL-SQW lasers for coupling high optical power into singlemode fiber," IEEE J. Quantum Electron., vol. 29, pp. 1932-1935, June 1993.
7. Z. L. Liau, S. C. Palmateer, S. H. Groves, J. N. Walpole, and L. J. Missagia, "Low-threshold InGaAs strained-layer quantum-well lasers (λ = 0.98 μm) with GaInP cladding layers and mass transported buried heterostructure," Appt. Phys. Lett., vol. 60, no. 2, pp. 6-8, 1992.
8. M. Horita, M. Usami, and Y. Matsushima, "Selective regrowth of InGaP by MOVPE using tertiarybutylphosphine," in ICMOVPE-VII, Conf. Dig., Yokohama, Japan, 1994, pp. 158-159.
9. R. Holz and S. Lourdudoss, "Highly resistive GaInP : Fe/GaAs for selective embedment of GaAs based heterostructures," in 8th Int. Conf. InP and Related Materials, Schwäbisch Gmünd, Germany, 1996, pp. 553-555.
10. S. Lourdudoss, R. Holz, O. Kjebon, and G. Landgren, "Iron doped GaInP for selective regrowth around GaAs mesas," J. Cryst. Growth, vol. 154, pp. 410-114, 1995.
11. S. Lourdudoss, O. Kjebon, J. Wallin, and S. Lindgren, "High frequency GaInAsP/InP laser mesas in 〈-110〉 direction with thick semi-insulating InP:Fe," IEEE Photon. Technol. Lett., vol. 5, pp. 1119-1121, Oct. 1993.