Reliability of 0.98-1.02 μm InGaAs laser diodes - improvement by low temperature growth of active layer

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volumn 1, Issue , 1999, Pages 198-199

  Nozawa, H ^a   Sasaki, T ^a   Amano, C ^a   Temmyo, J ^a   Munoz, E ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; HETEROJUNCTIONS; LIFE CYCLE; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL FILTERS; OPTICAL PUMPING; OPTICAL WAVEGUIDES; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SERVICE LIFE; SUBSTRATES;

CATASTROPHIC OPTICAL DAMAGE (COD); ELECTRON-CYCLOTRON-RESONANCE REACTIVE ION ETCHING; FREE SPACE LASING;

QUANTUM WELL LASERS;

EID: 0033361711     PISSN: 10928081     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)