Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for λ = 808 and 980 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3001, Issue , 1997, Pages 243-253

  Razeghi, Manijeh ^a   Yi, Hyuk J ^a   Diaz, Jacqueline E ^a   Kim, Seongsin ^a   Erdtmann, Matthew ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; DC GENERATORS; ELECTRIC CONDUCTIVITY; HETEROJUNCTIONS; LASERS; MIRRORS; OPTICAL TESTING; SEMICONDUCTING INDIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; COATINGS; DEGRADATION; RELIABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TESTING;

AL-FREE; HIGH POWERS; HIGH TEMPERATURE (HT); HIGH-RELIABILITY; LASER OPERATIONS; TEMPERATURE INSENSITIVITY; OPTICAL POWER;

SEMICONDUCTOR LASERS;

EID: 0031377737     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.273792     Document Type: Conference Paper

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