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Volumn 3628, Issue , 1999, Pages 29-37
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High reliability in 0.8-μm high power InGaAsP/InGaP/AlGaAs laser diodes with a broad waveguide
a
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Author keywords
[No Author keywords available]
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Indexed keywords
METALLORGANIC VAPOR PHASE EPITAXY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR QUANTUM WELLS;
TEMPERATURE;
THERMAL EFFECTS;
WAVEGUIDES;
ALUMINUM FREE ACTIVE REGION;
BROAD STRIPE;
BROAD WAVEGUIDE;
FACET TEMPERATURE;
SEMICONDUCTOR LASERS;
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EID: 0032652454
PISSN: 0277786X
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1117/12.344543 Document Type: Conference Paper |
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Times cited : (9)
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References (19)
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