Short-wavelength (0.7 μm < λ < 0.78 μm) high-power InGaAsP-active diode lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 785-791

  Mawst, L J ^a,b,c   Rusli, S ^a   Al Muhanna, A ^a,d   Wade, J K ^a,b,e  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^c NORTHROP GRUMMAN CORPORATION   (United States)

^d FLORIDA INSTITUTE OF TECHNOLOGY   (United States)

^e TEXAS A AND M UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CLADDING (COATING); CONTINUOUS WAVE LASERS; CRYSTAL ORIENTATION; HIGH POWER LASERS; LOW TEMPERATURE PROPERTIES; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; STRAIN; SUBSTRATES; TEMPERATURE MEASUREMENT; WAVEGUIDES;

CONTINUOUS WAVE OPERATION; LASER RELIABILITY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE PHOSPHIDE; SHORT WAVELENGTH LASERS; TEMPERATURE COEFFICIENTS; WAVELENGTH REGION;

SEMICONDUCTOR LASERS;

EID: 0033123788     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788452     Document Type: Article

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