Reduced gate leakage current and boron penetration of 0.18 μm 1.5 V MOSFETs using integrated RTCVD oxynitride gate dielectric

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 793-796

  Tseng, Hsing Huang ^a   O'Meara, Dave L ^a   Tobin, Philip J ^a   Wang, Victor S ^a   Guo, Xin ^a   Hegde, Rama ^a   Yang, Isabel Y ^a   Gilbert, Percy ^a   Cotton, Randy ^a   Hebert, Liz ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HOT CARRIERS; LEAKAGE CURRENTS; SEMICONDUCTING BORON;

BORON PENETRATION RESISTANCE; HOT CARRIER INJECTION;

MOSFET DEVICES;

EID: 0032276251     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)