Improved electrical characteristics of CoSi2 using HF-vapor pretreatment

IEEE Electron Device Letters

Volumn 20, Issue 5, 1999, Pages 200-202

  Wu, Y H ^a   Chen, W J ^b   Chang, S L ^a   Chin, Albert ^a   Gwo, S ^c   Tsai, C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; LEAKAGE CURRENTS; PASSIVATION; RAPID THERMAL ANNEALING; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; VAPORS;

COBALT SILICIDE; HF VAPOR PASSIVATION;

COBALT COMPOUNDS;

EID: 0032658863     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.761014     Document Type: Article

References (19)

1. K. K. Ng and W. T. Lynch, "The impact of intrinsic series resistance on MOSFET scaling," IEEE Trans. Electron Devices, vol. ED-34, pp. 503-511, Mar. 1987.
2. C. P. Chao, K. E. Violette, S. Unnisrishnan, M. Nandakumar, R. L. Wise, J. A. Kittl, Q. Z. Hong, and I. C. Chen, "Low resistance Ti or Co salicided raised source/drain transistors for sub-0.13-μm CMOS technologies," in IEDM Tech. Dig., 1997, pp. 103-106.
3. 2 with diode leakage and low sheet resistance at 0.065 μm gate length," in IEDM Tech. Dig., 1997, pp. 107-110.
4. W. T. Lynch and K. K. Ng, "A tester for the contact resistivity of self-aligned silicides," in IEDM Tech. Dig., 1988, pp. 352-355.
5. 2 on (100) and (110) surfaces at room temperatures," Appl. Phys. Lett., vol. 55, no. 19, pp. 2005-2007, 1989.
6. Q. Wang, M. C. Osburn, and C. A. Canovai, "Ultra-shallow junction formation using silicide as a diffusion source and low thermal budget," IEEE Trans. Electron Devices, vol. 39, pp. 2486-2496, Nov. 1992.
7. W. M. Chen, J. Lin, S. K. Banerjee, and J. C. Lee, "Simultaneous shallow-junction formation and gate doping p-channel metal-semiconductor-oxide field-effect transistor process using cobalt silicide as a diffusion/doping source," Appl. Phys. Lett., vol. 64, no. 3, pp. 345-347, 1994.
8. 2 transformation in self-aligned silicide applications," J. Appl. Phys., vol. 73, no. 7, pp. 3566-3568, 1993.
9. 2 on silicon," Appl. Phys. Lett., vol. 68, no. 24, pp. 3461-3463, 1996.
10. H. Shibata, Y. Makita, H. Katsumata, S. Kimura, N. Kobayashi, M. Hasegawa, S. Hishita, A. C. Beye, H. Takahashi, J. Tanabe, and S. Uekusa, "Fabrication of epitaxial silicides thin films by combining low-energy ion beam deposition and silicon molecular beam epitaxy," in Mat. Res. Soc. Symp. Proc., 1996, vol. 402, pp. 505-510.
11. 2 on (100) Si," Appl. Phys. Lett., vol. 58, no. 12, pp. 1308-1310, 1991.
12. 2 from the reaction of Si with a Co/Ti bilayer," Appl. Phys. Lett., vol. 66, no. 1, pp. 58-60, 1995.
13. 2 during rapid thermal annealing," J. Appl. Phys., vol. 69, no. 11, pp. 7612-7619, 1991.
14. 2 substrate," J. Appl. Phys., vol. 67, no. 10, pp. 6265-6268, 1990.
15. A. Chin, W. J. Chen, T. Chang, R. H. Kao, B. C. Lin, C. Tsai, and J. C.-M. Huang, "Thin oxides with in-situ native oxide removal," IEEE Electron Device Lett., vol. 18, pp. 417-419, Sept. 1997.
16. J. C. Lou, C. Galewski, and W. G. Oldham, "Dichlorosilane effects on low-temperature selective silicon epitaxy," Appl. Phys. Lett., vol. 58, no. 1, pp. 59-61, 1991.
17. A. Chin, B. C. Lin, and W. J. Chen, "High quality epitaxial Si grown by a simple low-pressure chemical vapor deposition at 550 °C," Appl. Phys. Lett., vol. 69, no. 11, pp. 1617-1620, 1996.
18. Y. H. Wu, W. J. Chen, A. Chin, and C. Tsai, "The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si," Appl. Phys. Lett., Jan. 1999.
19. 2/polycrystalline Si layers," Appl. Phys. Lett., vol. 64, no. 12, pp. 1505-1507, 1994.