New experimental evidence of latent interface-trap buildup in power vdmosfets

IEEE Transactions on Nuclear Science

Volumn 47, Issue 3 PART 1, 2000, Pages 580-586

  Jaksic, A B ^a   Ristic, G S ^a   Pejovic, M M ^a  

^a Faculty of Electrical Engineering   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GAMMA RAYS; INTERFACES (MATERIALS); IRRADIATION; MATHEMATICAL MODELS; RADIATION DAMAGE; THERMAL EFFECTS;

ISOTHERMAL ANNEALING; LATENT INTERFACE TRAP BUILDUP; RADIATION INDUCED DEFECTS; SWITCHING BIAS ANNEALING; SWITCHING TEMPERATURE ANNEALING;

MOSFET DEVICES;

EID: 0034205118     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.856483     Document Type: Article

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