Surface reaction of alternately supplied WF6 and SiH4 gases

Surface Science

Volumn 408, Issue 1-3, 1998, Pages 190-194

  Yamamoto, Yuji ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition (CVD); SiH4; Surface reaction; W; WF6

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DESORPTION; DISSOCIATION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GASES; HYDROFLUORIC ACID; SEMICONDUCTING SILICON; SILANES; SURFACE TREATMENT; TUNGSTEN COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); TUNGSTEN HEXAFLUORIDE;

SURFACE PHENOMENA;

EID: 0032097860     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00225-8     Document Type: Article

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