Simulation of degradation of dielectric breakdown field of thermal SiO2 films due to voids in Si wafers

IEEE Transactions on Electron Devices

Volumn 47, Issue 2, 2000, Pages 398-403

  Satoh, Yuhki ^a   Shiota, Takaaki ^a   Furuya, Hisashi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; COMPUTER SIMULATION; CRYSTAL GROWTH; DEFORMATION; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ETCHING; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; SINGLE CRYSTALS; VISCOELASTICITY;

DIELECTRIC BREAKDOWN;

MOS DEVICES;

EID: 0033896049     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.822286     Document Type: Article

References (20)

1. K. Yamabe, K. Taniguchi, and Y. Matsushita, "Thickness dependence of dielectric breakdown failure of thermal SiC>2 films," in Proc. Int. Reliability Physics Symp.. Phoenix, AZ, April 5-7, 1983, pp. 184-190.
2. H. Yamagishi, I. Fusegawa, N. Fujimaki, and M. Katayama, "Recognition of D defects in silicon single crystals by preferential etching and effect on gate oxide integrity," Semicond. Sci. Technol, vol. 7, pp. A135-A140, 1992.
3. T. Shiota, E. Morita, T. Shingyouji, and Y. Shimanuki, "The effect of COP on the dielectric breakdown characteristics of silicon MOS capacitor," in Proc. Spring Meeting Electrochemical Soc.. Honolulu, HI, May 16-21, 1993, pp. 211-221.
4. W. Wijaranakula, "Dissolution kinetics of D defects in Czochralski silicon," J. Appl. Phys.. vol. 75, pp. 3678-3680, 1994.
5. J. G. Park and G. A. Rozgonyi, "DRAM wafer qualification issues: Oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing," Solid State Phenom.. vol. 47/48, pp. 327-352, 1996.
6. 2 on Czochralski silicon," J. Appl. Phys., vol. 78, pp. 5984-5988, 1995.
7. S. Oka and M. Katayama, "Breakdown mechanism of oxide grown on Czochralski silicon wafers," Jpn. J.Appl. Phys., vol. 36, pp. 1995-1998, 1997.
8. H. Nishikawa et al., "Formation of grown-in defects during Czochralski silicon crystal growth," Jpn. J. Appl. Phys., vol. 36, pp. 6595-6600, 1997.
9. 2 films," Appl. Phys. Lett., vol. 64, pp. 303-305, 1994.
10. 2 films due to structural defects in Czochralski silicon substrates," J. Appl. Phys., vol. 79, pp. 7944-7957, 1996.
11. Y Murakami, T. Shiota, and T. Shingyouji, "Effect of oxidation ambient on the dielectric breakdown characteristics of thermal oxide films of silicon," J. Appl. Phys., vol. 75, pp. 5302-5305, 1994.
12. C. M. Osburn and D. W. Ormond, "Dielectric breakdown in silicon dioxide films on silicon. I. Measurement and interpretation," J. Electrochem. Soc., vol. 119, pp. 591-597, 1972.
13. Y Sakina, T. Ohno, and S. Matsumoto, "Two-dimensional analysis of thermal oxidation of silicon," Jpn. J. Appl. Phys., vol. 22, pp. L514-L516, 1983.
14. D. B. Kao, J. P. McVittie, W. D. Nix, and K. C. Saraswat, "Two-dimensional thermal oxidation of silicon. I. Experiments," IEEE Trans. Electron Devices, Vol. ED34, pp. 1008-1017, 1987.
15. _, "Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides," IEEE Trans. Electron Devices, vol. 35, pp. 25-37, Jan. 1988.
16. S. M. Hu, "Effect of process parameters on stress development in twodimensional oxidation," J. Appl. Phys., vol. 64, pp. 323-330, 1988.
17. C. S. Rafferty, L. Borucki, and R. W. Dutton, "Plastic flow during thermal oxidation of silicon, "Appl. Phys. Lett., vol. 54, pp. 1516-1518, 1989.
18. C.S. Rafferty and R. W. Dutton, "Plastic analysis of cylinder oxidation," Appl. Phys. Lett., vol. 54, pp. 1815-1817, 1989.
19. S.M. Hu, "Stress-related problems in silicon technology," J. Appl. Phys., vol. 70, pp. R53-R80, 1991.
20. B. E. Deal and A. S. Grove, "General relationship for the thermal oxidation of silicon," J Appl. Phys., vol. 36, pp. 3770-3778, 1965.