Effect of oxidation ambient on the dielectric breakdown characteristics of thermal oxide films of silicon

Journal of Applied Physics

Volumn 75, Issue 10, 1994, Pages 5302-5305

  Murakami, Yoshio ^a   Shiota, Takaaki ^a   Shingyouji, Takayuki ^a   Abe, Hidenobu ^b  

^a MITSUBISHI MATERIALS CORPORATION   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 12944300127     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.355731     Document Type: Article

References (8)