DRAM wafer qualification issues: Oxide integrity vs. D-defects, oxygen precipitates and high temperature annealing

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 327-352

  Park, J G ^a   Rozgonyi, G A ^b  

^a SAMSUNG Electronics   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; THERMOOXIDATION;

BREAKDOWN MECHANISM; CAPACITOR STRUCTURES; GATE OXIDE INTEGRITY; HIGH-TEMPERATURE ANNEALING; INTERSTITIAL INJECTION; OXIDATION-INDUCED STRESS; OXYGEN PRECIPITATES; THERMAL OXIDATION;

DISSOLVED OXYGEN;

EID: 17544369634     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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