THICKNESS DEPENDENCE OF DIELECTRIC BREAKDOWN FAILURE OF THERMAL SiO2 FILMS.

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1983, Pages 184-190

  Yamabe, Kikuo ^a   Taniguchi, Kenji ^a   Matsushita, Yoshiaki ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; THERMAL SILICON OXIDE FILMS; THICKNESS DEPENDENCE OF DIELECTRIC BREAKDOWN FAILURE; THIN FILMS;

INTEGRATED CIRCUITS, VLSI;

EID: 0020936680     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/irps.1983.361982     Document Type: Conference Paper

References (0)