Two-dimensional thermal oxidation of silicon—i. expeiiments

IEEE Transactions on Electron Devices

Volumn 34, Issue 5, 1987, Pages 1008-1017

  Saraswat, Krishna C ^a   Nix, William D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - GROWTH; STRESSES - THERMAL EFFECTS;

CONCAVE AND CONVEX STRUCTURES; CONTROLLED RADII CURVATURES; CYLINDRICAL SILICON STRUCTURES; OXIDATION RETARDATION AT LOW TEMPERATURES; OXIDE GROWTH PARAMETERS;

SEMICONDUCTING SILICON;

EID: 0023344918     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23037     Document Type: Article

References (25)

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