Two Dimensional Thermal Oxidation of Silicon—II. Modeling Stress Effects in Wet Oxides

IEEE Transactions on Electron Devices

Volumn 35, Issue 1, 1988, Pages 25-37

  Kao, Dah Bin ^a   Mcvittie, James P ^b   Saraswat, Krishna C ^b   Nix, William D ^b  

^a Fairchild Research Center ^*  (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL MODELS; SEMICONDUCTING SILICON COMPOUNDS - STRESSES; SURFACES - THERMAL EFFECTS;

CYLINDRICAL STRUCTURES SYMMETRY; SURFACE REACTION RATE; TWO-DIMENSIONAL OXIDE DEFORMATION STRESS; WET OXIDES;

SEMICONDUCTING SILICON;

EID: 0023855615     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2412     Document Type: Article

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