The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon

Journal of Applied Physics

Volumn 78, Issue 10, 1995, Pages 5984-5988

  Itsumi, Manabu ^a   Akiya, Hideo ^a   Ueki, Takemi ^a   Tomita, Masato ^a   Yamawaki, Masataka ^a  

^a NTT CORPORATION   (Japan)

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EID: 0001274178     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360603     Document Type: Article

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