Breakdown mechanism of oxide grown on Czochralski silicon wafers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 4 A, 1997, Pages 1995-1998

  Oka, Satoshi ^a   Katayama, Masatake ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Copper decoration; Czochralski silicon; Grown in defect; Imperfect silicon; Oxide breakdown

Indexed keywords

COPPER DECORATION; GROWN-IN DEFECT; IMPERFECT SILICON; OXIDE BREAKDOWN;

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

SILICON WAFERS;

EID: 0031123570     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1995     Document Type: Article

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