Plasma damage in p-GaN

Journal of Electronic Materials

Volumn 29, Issue 3, 2000, Pages 256-261

  Cao, X A ^a   Zhang, A P ^a   Dang, G T ^a   Ren, F ^a   Pearton, S J ^a   Van Hove, J M ^b   Hickman, R A ^b   Shul, R J ^c   Zhang, L ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b SVT ASSOCIATES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC BREAKDOWN OF SOLIDS; PLASMA ETCHING; SEMICONDUCTOR DIODES;

INDUCTIVELY COUPLED PLASMAS (ICP); POST ETCH ANNEALING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033891719     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0059-7     Document Type: Article

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