Reactive ion-beam etching of GaN grown by MOVPE

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 1029-1033

  Saotome, K ^a   Matsutani, A ^a   Shirasawa, T ^a   Mori, M ^a   Honda, T ^a   Sakaguchi, T ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; DRY ETCHING; ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS;

ALKALI SOLUTION; NITRIDE SEMICONDUCTORS; REACTIVE ION BEAM ETCHING; WET ETCHING;

REACTIVE ION ETCHING;

EID: 0030685950     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)