Ohmic contacts to Si-implanted and un-implanted n-type GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 855-860

  Brown, J ^a   Ramer, J ^a   Zheng, K ^a   Lester, L F ^a   Hersee, S D ^a   Zolper, J ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ETCHING; ION IMPLANTATION; METALS; OHMIC CONTACTS; SAPPHIRE; SILICON; SURFACES; TEMPERATURE;

IONIC SEMICONDUCTORS; LOW CONTACT RESISTIVITY; METALLIZATION; POST METALIZATION ANNEALING; RING SHAPED CONTACT DESIGN; SPECIFIC CONTACT RESISTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029726609     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)