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Volumn 395, Issue , 1996, Pages 745-749
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Effect of hydrogen-based, high density plasma etching on the electronic properties of gallium nitride
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Author keywords
[No Author keywords available]
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Indexed keywords
CHLORINE;
ELECTRIC PROPERTIES;
ELECTRON CYCLOTRON RESONANCE;
ELECTRONIC PROPERTIES;
FILM GROWTH;
HYDROGEN;
METALLORGANIC VAPOR PHASE EPITAXY;
METHANE;
PLASMA ETCHING;
REACTIVE ION ETCHING;
SEMICONDUCTING FILMS;
THIN FILMS;
CHLORINE BASE ETCHING SYSTEM;
ETCH RATES;
SEMICONDUCTOR GALLIUM NITRIDE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0029765294
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (18)
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References (13)
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