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Journal of Electronic Materials

Volumn 26, Issue 11, 1997, Pages 1287-1291

Effect of dry etching on surface properties of III-nitrides

(8) Ren, F a Lothian, J R a Pearton, S J b Abernahty, C R b Vartuli, C B b Mackenzie, J D b Wilson, R G c Karlicek, R F d

a LUCENT TECHNOLOGIES (United States)

b UNIVERSITY OF FLORIDA (United States)

c Hughes Aircraft Co (United States)

d EMERCO Inc (United States)

Author keywords

GaN; InAlN; Leakage current; Nitrogen surface; Plasma etching

Indexed keywords

EID: 0000926469 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-997-0072-1 Document Type: Article

Times cited : (42)

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