Electrical and optical changes in the near surface of reactively ion etched n-GaN

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 649-652

  Chen, J Y ^a   Pan, C J ^a   Chi, G C ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; ELECTRIC RESISTANCE MEASUREMENT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SUBSTRATES;

TRANSMISSION LINE MODEL METHOD; X-RAY GRAZING DIFFRACTION MEASUREMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033097013     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00314-1     Document Type: Article

References (11)

1. Pearton SJ, Abernathy CR. Semicond Sci Technol 1993;8:310.
2. Pearton SJ, Shul RJ. Solid-State Electron 1997;41:159.
3. Lin ME, Fan ZF. Appl Phys Lett 1994;64(7):887.
4. Juang C, Hsu JK. J Appl Phys 1992;72(2):684.
5. Pearton SJ, Chakrabari UK. Appl Phys Lett 1989;55:1633.
6. Ohtsuka K, Ohishi T. J Appl Phys 1991;70:2361.
7. Reeves GK, Harrison HB. IEEE 1982;3:111.
8. Fan Z, Mohammad SN. Appl Phys Lett 1996;68(12):1672.
9. Pang SW. J. Electrochem Soc 1986;133:784.
10. Pang SW, Goodhue WD. J. Vac Sci Technol 1988;6:1916.
11. Cheung R, Thomas S. Electron Lett 1987;23:857.