Solutions for heteroepitaxial growth of GaN and their impact on devices

Optical and Quantum Electronics

Volumn 32, Issue 3, 2000, Pages 227-248

  Kamp, Markus ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; LIGHT EMITTING DIODES; NUCLEATION; SAPPHIRE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

GALLIUM NITRIDE; HETEROEPITAXIAL GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033880417     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1007073421569     Document Type: Article

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