Dry etching of GaN substrates for high-quality homoepitaxy

Applied Physics Letters

Volumn 74, Issue 8, 1999, Pages 1123-1125

  Schauler, M ^a   Eberhard, F ^a   Kirchner, C ^a   Schwegler, V ^a   Pelzmann, A ^a   Kamp, M ^a   Ebeling, K J ^a   Bertram, F ^b   Riemann, T ^b   Christen, J ^b   Prystawko, P ^c   Leszczynski, M ^c   Grzegory, I ^c   Porowski, S ^c  

^a UNIVERSITY OF ULM   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001299015     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123463     Document Type: Article

References (10)

1. A. Pelzmann, C. Kirchner, M. Mayer, V. Schwegler, M. Schauler, M. Kamp, K. J. Ebeling, I. Grzegory, M. Leszczynski, G. Nowak, and S. Porowski, J. Cryst. Growth 189-190, 167 (1998).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemto, M. Sano, and K. Chocho, Appl. Phys. Lett. 73, 832 (1998).
3. S. Nakamura, private communications.
4. H. Teisseyre, P. Perlin, T. Suski, I. Grzegory, S. Porowski, J. Jun, A. Pietraszko, and T. D. Moustakas, J. Appl. Phys. 76, 2429 (1994).
5. E. S. Hellman, D. N. E. Buchanan, D. Wiesmann, and I. Brener, MRS Internet J. Nitride Semicond. Res. 1, 16 (1996).
6. J. L. Rouviere, J. L. Weyher, M. Seelmann-Eggebert, and S. Porowski, Appl. Phys. Lett. 73, 668 (1998).
7. B. Beaumont, private communications.
8. J. Christen, M. Grundmann, and D. Bimberg, J. Vac. Sci. Technol. B 9, 2358 (1991).
9. M. Mayer, A. Pelzmann, M. Kamp, K. J. Ebeling, H. Teisseyre, G. Nowak, M. Leszcnynski, I. Grzegory, S. Porowski, and G. Karczewski, Jpn. J. Appl. Phys., Part 2 36, L1634 (1997).
10. M. V. Averyanova, S. Yu. Karpov, Yu. N. Makarov, I. N. Przhevalskii, M. S. Ramm, and R. A. Talalaev, MRS Internet J. Nitride Semicond. Res. 1, 31 (1996).