Surface structures, surfactants and diffusion at cubic and wurtzite GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

  Zywietz, T ^a   Neugebauer, Jörg ^a   Scheffler, M ^a   Northrup, J ^b   Van De Walle, Chris G ^b  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIFFUSION IN SOLIDS; ENERGY ABSORPTION; GALLIUM NITRIDE; HIGH ENERGY ELECTRON DIFFRACTION; IMPURITIES; SEMICONDUCTOR MATERIALS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; SURFACE ROUGHNESS;

ADATOMS; GROWTH TEMPERATURES; LOCAL DENSITY OF STATES (LDOS); TOTAL ENERGY SURFACES (TES);

SURFACE STRUCTURE;

EID: 4043083399     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000983     Document Type: Article

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