Surface-state spectra from thick-oxide MOS tunnel junctions

Solid State Electronics

Volumn 17, Issue 9, 1974, Pages 913-929

  Ma, T P ^a   Barker, R C ^a  

^a YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY - MEASUREMENTS; ELECTRIC MEASUREMENTS - CAPACITANCE;

SEMICONDUCTOR DEVICES, MIS;

EID: 0016102049     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90044-6     Document Type: Article

References (31)

1. Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structures
2. DENSITY OF SiO2[Single Bond]Si INTERFACE STATES
3. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
4. Surface states at steam-grown silicon-silicon dioxide interfaces
5. Limitations of the MOS capacitance method for the determination of semiconductor surface properties
6. The defect structure of grown silicon dioxide films
7. Lateral AC current flow model for metal-insulator-semiconductor capacitors
8. Temperature Dependence of Inversion-Layer Frequency Response in Silicon
9. Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure