An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density

Solid State Electronics

Volumn 35, Issue 3, 1992, Pages 345-355

  Witczak, Steven C ^a   Suehle, John S ^a   Gaitan, Michael ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES, MOSFET;

INTERFACE TRAP DENSITIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0026837842     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90238-8     Document Type: Article

References (28)

1. The Effect of Hot Electron Injection on Interface Charge Density at the Silicon to Silicon Dioxide Interface
2. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements
3. Surface states at steam-grown silicon-silicon dioxide interfaces
4. Theory of the MOS transistor in weak inversion-new method to determine the number of surface states
5. Measurement of Radiation-Induced Interface Traps Using MOSFETs
6. Correlation between CMOS Transistor and Capacitor Measurements of Interface Trap Spectra
7. A reliable approach to charge-pumping measurements in MOS transistors
8. Charge pumping in MOS devices
9. Frequency and temperature tests for lateral nonuniformities in MIS capacitors
10. Observation of Impurity Redistribution During Thermal Oxidation of Silicon Using the MOS Structure
11. 2interface trap densities in the presence of arbitrary doping profiles