Conductance associated with interface states in MOS tunnel structures

Solid State Electronics

Volumn 15, Issue 9, 1972, Pages 993-998

  Card, H C ^a   Rhoderick, E H ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - ELECTRIC CONDUCTIVITY;

SEMICONDUCTOR DIODES;

EID: 0015397564     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(72)90141-4     Document Type: Article

References (7)

1. Tunneling in MIS structures—II
2. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
3. Determination of the Properties of Films on Silicon by the Method of Ellipsometry
4. METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES