A method to extract interface state parameters from the MIS parallel conductance technique

Solid State Electronics

Volumn 16, Issue 1, 1973, Pages 121-124

  Simonne, J J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343645617     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(73)90133-0     Document Type: Article

References (7)

1. Surface states at steam-grown silicon-silicon dioxide interfaces
2. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique