Interface states in MOS structures with 20-40 Å thick SiO2 films on nondegenerate Si

Solid State Electronics

Volumn 15, Issue 2, 1972, Pages 221-237

  Kar, S ^a   Dahlke, W E ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000644893     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(72)90056-1     Document Type: Article

References (22)

1. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
2. Surface states at steam-grown silicon-silicon dioxide interfaces
3. METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURES
4. Improved Properties of Silicon Dioxide Layers Grown Under Bias
5. Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room Air
6. Reduction of Radiation Sensitivity in MOS Structures by Aluminum Doping of Silicon Dioxide