Detection of interface and volume traps in very thin oxide MOS structures using DLTS, quasi-static and conductance measurements

Solid State Electronics

Volumn 34, Issue 9, 1991, Pages 933-936

  Bauza, D ^a   Morfouli, P ^a   Pananakakis, G ^a  

^a ENSERG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS;

INTERFACE TRAPS; MOS CAPACITORS; VOLUME TRAPS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0026220704     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90210-P     Document Type: Article

References (15)

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5. Characterization of Si-SiO2 interface states: Comparison between transient capacitance and conductance techniques
6. Tunneling in metal-oxide-silicon structures
7. Complete exploration of the silicon gap at the SiSiO2 interface of MIS tunnel diodes using the conductance technique at various temperatures and illumination levels