A detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors

IEEE Transactions on Nuclear Science

Volumn 47, Issue 2 PART 2, 2000, Pages 446-451

  Menichelli, D ^a   Pirollo, S ^a   Li, Z ^a  

^a INFN SEZIONE DI FIRENZE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; INDUCED CURRENTS; RADIATION EFFECTS; SILICON SENSORS;

THERMALLY STIMULATED CURRENT (TSC);

PARTICLE DETECTORS;

EID: 0033724018     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.846278     Document Type: Article

References (24)

1. "ATLAS collaboration,", Tech. Proposal, CERN/LHCC/94-43, LHCC/P2, 1994.
2. "CMS: The compact muon solenoid tech. proposal,", 1994.
3. "LHC: The large hadronic collider conceptual design,", 1995.
4. Z. Li, G. Ghislotti, H.W. Kraner, C. J. Li, and B. Nielsen, "Microscopic analysis in a high resistivity silicon detector irradiated to 1.7 X 1013 n/cm2 "mlEEENucl. Sei. Symp. Medical Imaging Conf. Rec., San Francisco, CA, Oct. 21-28, 1995, pp. 852-856.
5. U. Biggeri, E. Borchi, M. Bruzzi, Z. Li, and E. Verbitskaya, "Radiation damage on silicon after very high neutron fluences irradiation," Nucl. Phys. B (Proc. Suppl.). vol. 61B, pp. 475-480, 1998.
6. Z. Li, B. Andersen, B. Barnet, R. Beuttenmuller, W. Chen, C.Y. Chien, V. Eremin, M. Frautschi, G. Grim, G. Hu, S. Kwan, D. Lander, S. Mani, S. U. Pandey, Q. Wang, S. Willard, and X. Xie, "Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6 X 1014 n/cm2 in LHC application," Nucl. Instrum. Methods A, vol. 409, pp. 180-183, 1998.
7. U. Biggeri, E. Borchi, M. Bruzzi, Z. Li, and E. Verbitskaya, "Study of electrical properties of high- and medium-resistivity silicon detectors irradiated with very high neutron fluence," Nucl. Instrum. Methods A, vol. 409, pp. 176-179, 1998.
8. B. Dezillie, Z. Li, V. Eremin, M. Bruzzi, S. Pirollo, S.U. Pandey, and C. J. Li, "Improved radiation hardness for Si detectors: Application of low resistivity starting material and/or manipulation of N-4rr by selective filling of radiation-induced traps at low temperature," IEEE Trans. Nucl. ScL, vol. 46, pp. 834-838, 1999.
9. E. Borchi, M. Bruzzi, B. Dezillie, S. Lazanu, Z. Li, and S. Pirollo, "Hall effect analysis in irradiated silicon samples with different resistivities," IEEE Trans. Nucl. Sei., vol. 46, pp. 221-227, 1999, to be published.
10. Z. Li, "Systematic modeling and comparisons of capacitance and current based microscopic defect analysis techniques for measurements of high resistivity silicon detectors after irradiation," Nucl. Instrum. Methods A, vol. 403, pp. 399-416, 1998.
11. M. Bruzzi, "TSC-DATA analysis of heavily irradiated silicon detectors," Nucl. Instrum. Methods A., vol. 352, p. 618, 1995.
12. E. Catacchini, D. Menichelli, and S. Pirollo, "A comparative study of TSC, TSCAP, DLTS analysis in irradiate Si detectors," // Nuovo Cimento, vol. 112, pp. 23-33, 1999.
13. D. Menichelli and E. Borchi, "A new method to analyze deep level spectra of irradiated semiconductors," Material Sei. Semiconductor Processing, to be published.
14. Z. Li, V. Eremin, N. Strokan, and E. Verbitskaya, "Investigation of the type inversion phenomena: Resistivity and carrier mobility in the space charge region and electrical neutral bulk in neutron irradiated silicon p+n junction detectors," IEEE Trans. Nucl. Sei., vol. 40, pp. 367-375, 1993.
15. A. Baldini and M. Bruzzi, "Thermally stimulated current spectroscopy: Experimental techneques for the investigation of silicon detectors," Rev. Sei. Instrum.. vol. 64, p. 932, 1993.
16. D. Menichelli, M. Bruzzi, Z. Li, and V. Eremin, "Modeling of observed double-junction effect," Nucl. Instrum. Methods A, vol. 426, pp. 135-139, 1999.
17. G. Lindstrom, M. Moll, and E. Fretwurst, "Radiation hardness of silicon detectors-A challenge for high-energy physics," Nucl. Instrum. Methods A, vol. 426, pp. 1-15, 1999.
18. E. Borchi, M. Bruzzi, Z. Li, and S. Pirollo, "Thermally stimulated currents analysis of the shallow levels in irradiated silicon detectors," J. Phys. D: Appl. Phys., vol. 33, pp. 299-304, 2000.
19. J.M. Trombetta and G. D. Watkins, "Identification of an interstitial carbon-interstitial oxygen complex in silicon, "Appl. Phys. Lett., vol. 51, pp. 1103-1105, 1987.
20. E. Borchi, M. Bruzzi, C. Leroy, S. Pirollo, and S. Sciortino, "Electrical characteristics and charge collection efficiency of silicon detectors irradiated with very high neutron and proton fluences," Nucl. Phys. B (Proc. Suppl), vol. 61, pp. 481-486, 1998.
21. G.D. Watkins and J. W. Corbett, "Defects in irradiated silicon: Electron paramagnetic resonance of the divacancy," Phys. Rev. B, vol. 138, pp. 543-554, 1965.
22. V. Eremin, A. Ivanov, E. Verbitskaya, Z. Li, and S.U. Pandey, "Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors," Nucl. Instrum. Methods A, vol. 426, pp. 120-125, 1999.
23. E. Fretwurst, V Eremin, H. Feick, J. Gerhardt, Z. Li, and G. Lindstrom, "Investigation of damage-induced defects in silicon TCT," Nucl. Instrum. Methods A, vol. 388, pp. 356-360, 1997.
24. Y.H. Lee and W. Corbett, "EPR studies in electron-irradiated silicon: A triplet of vacancy-oxygen complexes," Phys. Rev. B, vol. 13, pp. 2653-2666, 1976.