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Volumn 40, Issue 4, 1993, Pages 367-375

Investigation of the Type Inversion Phenomena: Resistivity and Carrier Mobility in the Space Charge Region and Electrical Neutral Bulk in Neutron Irradiated Silicon p+-n Junction Detectors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; NEUTRONS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

EID: 0027649007     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.256582     Document Type: Article
Times cited : (14)

References (18)
  • 4
    • 84939757219 scopus 로고
    • The use of the Signal Current Pulse Shape to Study the Internal Electrical Field Profile and Trapping effects in Neutron Damaged Silicon Detectors
    • Presented at the Sixth European Symposium on Semiconductor Detectors, Milano, Italy, Feb. 24–26, to be published in Nucl. Instr. and Meth. BNL-47506
    • H.W. Kraner, Z. Li, and E. Fretwurst, The use of the Signal Current Pulse Shape to Study the Internal Electrical Field Profile and Trapping effects in Neutron Damaged Silicon Detectors, Presented at the Sixth European Symposium on Semiconductor Detectors, Milano, Italy, Feb. 24–26, 1992, to be published in Nucl. Instr. and Meth. BNL-47506
    • (1992)
    • Kraner, H.W.1    Li, Z.2    Fretwurst, E.3
  • 18
    • 84939758223 scopus 로고    scopus 로고
    • to be published
    • Z. Li, to be published.
    • Li, Z.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.