Hall effect analysis in irradiated silicon samples with different resistivities

IEEE Transactions on Nuclear Science

Volumn 46, Issue 4 PART 1, 1999, Pages 834-838

  Borchi, E ^a   Bruzzi, M ^b   Dezillie, B ^a   Lazanu, S ^b   Li, Z ^a   Pirollo, S ^a  

^a INFN SEZIONE DI FIRENZE   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; ELECTRIC CONDUCTIVITY; ENERGY GAP; EPITAXIAL GROWTH; HALL EFFECT; NEUTRON IRRADIATION; PARTICLE DETECTORS; POINT DEFECTS; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTOR GROWTH; SILICON SENSORS;

FLOAT ZONE TECHNIQUE; VAN DER PAUW EFFECT;

SEMICONDUCTING SILICON;

EID: 0033341771     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.790687     Document Type: Article

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