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Volumn 426, Issue 1, 1999, Pages 120-125
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Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
CHARGE CARRIERS;
COMPUTER SIMULATION;
DEEP LEVEL TRANSIENT SPECTROSCOPY;
ELECTRIC CURRENT MEASUREMENT;
ELECTRIC FIELDS;
ENERGY GAP;
GAMMA RAYS;
NEUTRON IRRADIATION;
PROTON IRRADIATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR DETECTORS;
RADIATION DETECTORS;
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EID: 0032681130
PISSN: 01689002
EISSN: None
Source Type: Journal
DOI: 10.1016/S0168-9002(98)01479-X Document Type: Article |
Times cited : (36)
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References (9)
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