메뉴 건너뛰기




Volumn 426, Issue 1, 1999, Pages 120-125

Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE CARRIERS; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ENERGY GAP; GAMMA RAYS; NEUTRON IRRADIATION; PROTON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

EID: 0032681130     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01479-X     Document Type: Article
Times cited : (36)

References (9)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.