Modelling of observed double-junction effect

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 426, Issue 1, 1999, Pages 135-139

  Menichelli, D ^a   Bruzzi, M ^a   Li, Z ^b   Eremin, V ^c  

^a INFN SEZIONE DI FIRENZE   (Italy)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ENERGY GAP; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

DOUBLE-JUNCTION EFFECT; SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032652669     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01482-X     Document Type: Article

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