Thermally stimulated currents analysis of the shallow levels in irradiated silicon detectors

Journal of Physics D: Applied Physics

Volumn 33, Issue 3, 2000, Pages 299-304

  Borchi, E ^a,b   Bruzzi, M ^a,b   Li, Z ^c   Pirollo, S ^a,b  

^a Dipartimento di Energetica   (Italy)

^b INFM   (Italy)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DETECTORS; ELECTRIC CURRENT MEASUREMENT; IRRADIATION; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; THERMAL VARIABLES MEASUREMENT;

EFFECTIVE SPACE CHARGE CONCENTRATION; FLUENCE; SHALLOW LEVEL CONCENTRATIONS; THERMALLY STIMULATED CURRENTS ANALYSIS;

ELECTRON ENERGY LEVELS;

EID: 0034614973     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/3/318     Document Type: Article

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