Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6 x 1014 n/cm2 in LHC application

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 409, Issue 1-3, 1998, Pages 180-183

  Li, Z ^a   Anderson, D ^b   Barnett, B ^c   Beuttenmuller, R ^a   Chen, W ^a   Chien, C Y ^c   Eremin, V ^g   Frautschi, M ^c   Grim, G ^d   Hu, G ^c   Kwan, S ^b   Lander, D ^d   Mani, S ^d   Pandey, S U ^e   Wang, Q ^f   Willard, S ^d   Xie, X ^c  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b FERMI NATIONAL ACCELERATOR LABORATORY   (United States)

^c JOHNS HOPKINS UNIVERSITY   (United States)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e WAYNE STATE UNIVERSITY   (United States)

^f NORTHWEST INSTITUTE OF NUCLEAR TECHNOLOGY   (China)

^g IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOSIMETRY; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC SPACE CHARGE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON SENSORS;

LARGE HADRON COLLIDERS (LHC); SEMICONDUCTOR DETECTORS;

RADIATION DETECTORS;

EID: 0032068244     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00084-9     Document Type: Article

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