Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7×1015 n/cm2*

IEEE Nuclear Science Symposium & Medical Imaging Conference

Volumn 2, Issue , 1995, Pages 852-856

  Li, Z ^a   Ghislotti, G ^a   Kraner, H W ^a   Li, C J ^a   Nielsen, B ^a   Feick, H ^a   Lindstroem, G ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ENERGY GAP; LEAKAGE CURRENTS; MICROSCOPIC EXAMINATION; NEUTRON IRRADIATION; SEMICONDUCTING SILICON;

ARRHENIUS PLOTS; CURRENT DEEP LEVEL TRANSIENT SPECTROSCOPY; ELEVATED TEMPERATURE ANNEALING; MICROSCOPIC ANALYSIS; SILICON DETECTOR; VERY HIGH FLUENCE NEUTRON;

PARTICLE DETECTORS;

EID: 0029452893     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)