Systematic modelling and comparisons of capacitance and current-based microscopic defect analysis techniques for measurements of high-resistivity silicon detectors after irradiation

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 403, Issue 2-3, 1998, Pages 399-416

  Li, Z ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARGE CARRIERS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC CURRENTS; MICROSCOPIC EXAMINATION; NEUTRON IRRADIATION; SEMICONDUCTING SILICON;

THERMALLY STIMULATED CURRENTS (TSC);

RADIATION DETECTORS;

EID: 0031999099     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(97)01099-1     Document Type: Article

References (39)

1. D.V. Lang, J. Appl. Phys. 45 (7) (1974) 3023.
2. L.C. Kimerling, in: Radiation Effects in Semiconductors, The Institute of Physics, Bristol, UK, 1976, Institute of Physics Conference Series vol. 31, 1977, p. 221.
3. L. Vismara, SICAPO Collaboration, Presented at the Int. Conf. on Advanced Technology and Particle Physics, Como, Italy, 13-16 June, 1988.
4. Z. Li, W. Chen, H.W. Kraner, Nucl. Instr. and Meth. A 308 (1991) 585.
5. E. Borchi, C. Bertrand, C. Leroy, M. Bruzzi, C. Furetta, R. Paludetto, P.G. Rancoita, L. Vismara, P. Giubellino, Nucl. Instr. and Meth. A 279 (1989) 277.
6. Z. Li, H.W. Kraner, E. Verbitskaya, V. Eremin, A. Ivanov, M. Rattaggi, P.G. Rancoita, F.A. Rubinelli, S.J. Fonash, C. Dale, P. Marshall, Presented at the IEEE Nuclear Radiation Effects Conference, New Orleans, LA, 13-17 July, 1992; IEEE Trans, Nucl. Sci. 39 (6) (1992) 1730.
7. Z. Li, H.W. Kraner, E. Verbitskaya, V. Eremin, A. Ivanov, M. Rattaggi, P.G. Rancoita, F.A. Rubinelli, S.J. Fonash, C. Dale, P. Marshall, Presented at the IEEE Nuclear Radiation Effects Conference, New Orleans, LA, 13-17 July, 1992; IEEE Trans, Nucl. Sci. 39 (6) (1992) 1730.
8. V. Eremin, A. Ivanov, E. Verbitskaya, Z. Li, Defection mechanism of radiation induced defect levels in high resistivity silicon by DLTS method with preliminary filling pulse, BNL-60143.
9. V. Eremin, A. Ivanov, E. Verbitskaya, Z. Li, BNL-60273, Presented at the IEEE Nuclear Science Symp. Norfolk, VA, 30 October-November, 1994; IEEE Trans, Nucl. Sci. 42 (4) (1995) 387.
10. V. Eremin, A. Ivanov, E. Verbitskaya, Z. Li, BNL-60273, Presented at the IEEE Nuclear Science Symp. Norfolk, VA, 30 October-November, 1994; IEEE Trans, Nucl. Sci. 42 (4) (1995) 387.
11. E. Fretwurst, C. Dehn, H. Feick, P. Heydarpoor, G. Lindstroem, M. Moll, C. Schutze, Nucl. Instr. and Meth. A 377 (1996) 258.
12. J. Matheson, M. Robins, S. Watts, Nucl. Instr. and Meth. A 377 (1996) 224.
13. H. M Heijine, J.C. Muller, P. Siffert, Rad. Effects 29 (1976) 25.
14. U. Biggeri, E. Borchi, M. Bruzzi, S. Lazanu, Z. Li, S. Lazanu, BNL-49017, Presented at the IEEE Nucl. Sci. Symp., San Francisco, CA, 2-5 November, 1993; IEEE Trans, Nucl. Sci. 41 (4) (1994) 964.
15. U. Biggeri, E. Borchi, M. Bruzzi, S. Lazanu, Z. Li, S. Lazanu, BNL-49017, Presented at the IEEE Nucl. Sci. Symp., San Francisco, CA, 2-5 November, 1993; IEEE Trans, Nucl. Sci. 41 (4) (1994) 964.
16. Z. Li, H.W. Kraner, S. Lazanu, U. Biggeri, E. Borchi, M. Bruzzi, BNL-60905, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46; in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 123.
17. Z. Li, H.W. Kraner, S. Lazanu, U. Biggeri, E. Borchi, M. Bruzzi, BNL-60905, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46; in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 123.
18. Z. Li, H.W. Kraner, S. Lazanu, U. Biggeri, E. Borchi, M. Bruzzi, BNL-60905, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46; in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 123.
19. M. Bruzzi, E. Borchi, A. Baldini, J. Appl. Phys. 72 (9) (1992) 4007.
20. C.J. Li, Z. Li, BNL-49045, Presented at the Int. Symp. on Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 22-24 May, 1993, Nucl. Instr. and Meth. A 342 (1994) 137.
21. C.J. Li, Z. Li, BNL-49045, Presented at the Int. Symp. on Development and Application of Semiconductor Tracking Detectors, Hiroshima, Japan, 22-24 May, 1993, Nucl. Instr. and Meth. A 342 (1994) 137.
22. C.J. Li, Z. Li, Nucl. Instr. and Meth. A 364 (1995) 108.
23. M.G. Buehler, Solid State Electron. 15 (1972) 69.
24. J.G. Simmons, G.W. Taylor, Phys. Rev. B (1972) 1619.
25. J.A. Borsuk, R. Swanson, IEEE Trans. Electron Devices, ED-27 (12) (1980) 2217.
26. C.T. Sah, Solid State Electron. 19 (1975) 975.
27. G.L. Miller, D.V. Lang, L.C. Kimerling, Ann. Rev. Mater. Sci. 7 (1977) 377.
28. S.M. Sze, Physics of Semiconductor Devices, 2nd edition, Wiley, Taipei, Taiwan.
29. M. Bruzzi, Nucl. Instr. and Meth. A 352 (1995) 618.
30. Z. Li, C.J. Li, V. Eremin, E. Verbitskaya, Nucl. Instr. and Meth. A 377 (1996) 265.
31. Z. Li, H.W. Kraner, BNL-44648, Presented at the IEEE Nucl. Sci. Symp., 23-27 October, 1990, Arlington, VA; IEEE Trans., Nucl. Sci. 38 (2) (1991) 244.
32. Z. Li, H.W. Kraner, BNL-44648, Presented at the IEEE Nucl. Sci. Symp., 23-27 October, 1990, Arlington, VA; IEEE Trans., Nucl. Sci. 38 (2) (1991) 244.
33. Z. Li, BNL-49058, IEEE Nuclear Science Symp., San Francisco, CA, 1993; IEEE Trans, Nucl. Sci. 41 (4) (1994) 948.
34. Z. Li, BNL-49058, IEEE Nuclear Science Symp., San Francisco, CA, 1993; IEEE Trans, Nucl. Sci. 41 (4) (1994) 948.
35. Z. Li, G. Ghislotti, H.W. Kraner, C.J. Li, B. Nielsen, H. Feick, G. Lindstroem, IEEE Trans. Nucl. Sci. 43 (3) (1996) 1590.
36. Z. Li, BNL-49822, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46, in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 101.
37. Z. Li, BNL-49822, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46, in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 101.
38. Z. Li, BNL-49822, Presented at the 1st Int. Conf. on Large Scale Applications and Radiation Hardness of Semiconductor Detectors, Florence Italy, 7-9 July, 1993, Italian Physical Society Conf. Proc., vol. 46, in: A. Baldini, E. Focardi (Eds.), Large Scale Applications and Radiation Hardness of Semiconductor Detectors, SIF, Bologna, 1994, p. 101.
39. A. Hallen, N. Keskitalo, F. Masszi, V. Nagl, J. Appl. Phys. 79 (8) (1996) 3906.