High performance 0.25μm p-type Ge/SiGe MODFETs

Electronics Letters

Volumn 34, Issue 19, 1998, Pages 1888-1889

  Hock G ^a   Hackbarth, T ^b   Erben, U ^a   Kohn, E ^a   Konig U ^b  

^a UNIVERSITY OF ULM   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CURRENTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MOSFET);

FIELD EFFECT TRANSISTORS;

EID: 0032164902     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981284     Document Type: Article

References (6)

1. ARAFA, M., FAY, P., ISMAIL, K., CHU, J.O., MEYERSON, B.S., and ADESIA, I.: 'DC and RF performance of 0.25μm p-type SiGe MODFET', IEEE Electron Device Lett., 1996, 17, (9), pp. 449-451
2. T low operating bias self aligned p-type SiGe MODFET', IEEE Electron Device Lett., 1996, 17, (12), pp. 586-588
3. BECK, W.A., and ANDERSON, J.R.: 'Determination of electrical transport properties using a novel magnetic field dependent Hall technique', J. Appl. Phys., 1987, 62, (2), pp. 541-554
4. x heterostructures with respect to FET applications'. E-MRS Spring Meeting, Strasbourg, France, 16-19 June 1998, (to be published in Thin Solid Films)
5. TAUR, Y., WIND, S., MII, Y.J., et al.: 'High performance 0.1 μm CMOS devices with 1.5V power supply'. IEDM Tech. Dig., 1993, pp. 127-130
6. GLÜCK, M., HACKBARTH, T., BIRK, M., HAAS, A., KOHN, E., and KÖNIG, U.: 'Design and fabrication of SiGe n-type MODFETs', Physica E: Low dimensional Systems and Nanostructures, 1998