Band gap and band alignment of strain reduced Si/Si1-x-yGexCy multiple quantum well structures obtained by photoluminescence measurements

Applied Physics Letters

Volumn 73, Issue 9, 1998, Pages 1257-1259

  Hartmann, R ^a   Gennser, U ^a   Sigg, H ^a   Grutzmacher D ^a   Ensslin, K ^b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005335283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122144     Document Type: Article

References (12)

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