Device innovation and material challenges at the limits of CMOS technology

Annual Review of Materials Science

Volumn 30, Issue , 2000, Pages 681-697

  Solomon, P M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); MATERIALS SCIENCE; MOSFET DEVICES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; VLSI CIRCUITS;

SILICON TRANSISTORS;

CMOS INTEGRATED CIRCUITS;

EID: 0033693266     PISSN: 00846600     EISSN: None     Source Type: Journal    
DOI: 10.1146/annurev.matsci.30.1.681     Document Type: Article

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